Micro and Nano Electronics Lab
Discipline OF ECE, PDPM Indian Institute of Information Technology Design and Manufacturing Jabalpur


2022
S. No. Paper Title
1
DV Prashant, Suneet Kumar Agnihotri, DP Samajdar, “Efficient GaAs nanowire solar cells with carrier selective contacts: FDTD and device analysis”, Materials Science in Semiconductor Processing 141, 106410. (Impact Factor: 3.927)
2
Ankit Dixit, Pavan Kumar Kori, Chithraja Rajan & Dip Prakash Samajdar, “Design Principles of 22-nm SOI LDD-FinFETs for Ultra-Low-Power Analog Circuits”, Journal of Electronic Materials, (Impact Factor: 1.81)
3
I Mal, DP Samajdar, “InPNBi/InP heterostructures for optoelectronic applications: A k- p investigation”, Materials Science in Semiconductor Processing 149, 106857(Impact Factor: 3.927)
4
N Jain, I Mal, DP Samajdar, N Bagga, “Theoretical exploration of the optoelectronic properties of InAsNBi/InAs heterostructures for infrared applications: A multi-band k· p approach”, Materials Science in Semiconductor Processing 148, 106822. (Impact Factor: 3.927)
5
V Chauhan, DP Samajdar, N Bagga, “Quasi-analytical model of surface potential and drain current for Trigate negative capacitance FinFET: a superposition approach”, Semiconductor Science and Technology IOP Publishing, (Impact Factor: 2.352)
6
Suneet Kumar Agnihotri, DV Prashant, DP Samajdar, “A Modified Hexagonal Pyramidal InP nanowire Solar Cell structure for Efficiency Improvement: Geometrical Optimisation and Device Analysis”, Solar Energy, Volume 237, Pages 293-300. (Impact Factor: 5.742)
7
Kanchan Cecil, Jawar Singh, Dip Prakash Samajdar, “A Raised Source/Drain Dopingless Tunnel FET with Stacked Source: Design and Analysis”, Silicon, Volume 14, Issue 7, Pages - 3665-3672. (Impact Factor: 2.67)
8
Omdarshan Paul, Chithraja Rajan, Dip Prakash Samajdar, Tarek Hidouri, Samia Nasr, “Ge/GaAs Based Negative Capacitance Tunnel FET Biosensor: Proposal and Sensitivity Analysis”, Silicon, Pages 1-9. (Impact Factor: 2.67)
9
Ankit Dixit, Dip Prakash Samajdar, Navjeet Bagga, “Impact of the mole fraction modulation on the RF/DC performance of GaAs1−xSbx FinFET”, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Volume35, Issue 2, Pages e2957. (Impact Factor: 1.75)
10
Arpita Biswas, Chithraja Rajan, Dip Prakash Samajdar, “A Novel RFET Sensor for Label-Free Biomolecule Detection”, Silicon, Pages 1-9. (Impact Factor: 2.67)
11
Pavan Kumar Kori, Ankit Dixit, Chithraja Rajan, Dip Prakash Samajdar, “22 nm LDD FinFET Based Novel Mixed Signal Application: Design and Investigation”, Silicon, Pages 1-13. (Impact Factor: 2.67)
12
Chithraja Rajan, Omdarshan Paul, Dip Prakash Samajdar, Tarek Hidouri, Samia Nasr, “Performance Analysis of III-V and IV Semiconductors Based Double Gate Hetero Material Negative Capacitance TFET”, Silicon, Pages 1-13, (Impact Factor: 2.67)
13
Chandan, B. V., Nigam, K., Tikkiwal, V. A., & Sharma, D. "impact of Hetero Dielectric on the Device Electrical and Linearity Characteristics of Electrically Doped Tunnel FET. Advanced Science, Engineering and Medicine", 11(6) 2019, 484-490.
14
Akash Patnaik, Neeraj Jaiswal, Rohit Singh, Pankaj Sharma, “Analytical Model for 2DEG Charge Density in β-(AlxGa1-x)2O3/Ga2O3 HFET”, Semiconductor Science and Technology, vol 37, 25002. (Impact Factor: 2.35)
15
Sachchidanand, Anil Kumar, and Pankaj Sharma, “Performance Investigation of Organic/Inorganic Bottom Cell on Lead-Free Cs3Sb2Br9 Based All-Perovskite Tandem Solar Cell”, IEEE Transactions on Electron Devices.
16
Akash Patnaik, Neeraj Jaiswal, and Pankaj Sharma, “Role of Device Parameters in Optimizing 2DEG Charge Density in β-(AlxGa1-x)2O3/Ga2O3 HFET: An Analytical Approach”, IEEE Transactions on Electron Devices.
17
Prashant Kumar, Meena Panchore, Pushpa Raikwal, Kanchan Cecil "Performance Investigation of Ge DLTFET Based Digital Integrated Circuit" International Journal of Electronics Letters, Accepted May 2022.
18
Sil, I, B Chakraborty, K Dutta, H. Awasthi, S. Goel, and P. Bhattacharyya. 2022. “Capacitive Mode Vapor Sensing Phenomenon in ZnO Homojunction: An Insight Through Space Charge Model and Electrical Equivalent Circuit.” IEEE Sensors Journal 22 (10): 9483–90. https://doi.org/10.1109/JSEN.2022.3165812. (Impact Factor: 3.076)
19
R. K. Jaisawal, S. Rathore, P. N Kondekar, S. Yadav, B. Awadhiya, P. Upadhyay and N. Bagga, "Assessing the analog/RF and linearity performances of FinFET using high threshold voltage techniques," Semiconductor Science and Technology, March. 2022. (Impact Factor: 2.35)
20
S. Rathore, R. K. Jaisawal, P. Suryavanshi, and P.N. Kondekar, “Investigation of ambient temperature and thermal contact resistance induced self-heating effects in nanosheet FET,” Semiconductor Science and Technology, vol. 37, pp. 055019, no. 5, Apr. 2022, doi: 10.1088/1361-6641/ac62fb.
21
S. Rathore, R. K. Jaisawal, P. N. Kondekar and N. Bagga, "Design Optimization of Three-Stacked Nanosheet FET from Self-Heating Effects Perspective," IEEE Transactions on Device and Materials Reliability, 2022, doi: 10.1109/TDMR.2022.3181672.