Micro and Nano Electronics LAB, PDPM IIITDMJ

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JOURNAL PUBLICATIONS

2018

S. No. Paper Title

1 Pandey, S., Gawande, T. & Kondekar, P.N. “A 3.1–10.6 GHz UWB LNA Basedon Self Cascode Technique for Improved Bandwidth and High Gain” Wireless Pers Commun (2018).

2 Pandey, Sunil; Gawande, Tushar; Inge, Shashank; Pathak, Abhijeet; Kondekar, Pravin N.: 'Design and analysis of wideband low-power LNA for improved RF performance with compact chip area', IET Microwaves, Antennas & Propagation, 2018, DOI: 10.1049/iet-map.2018.0055

3 Bhaskar Awadhiya, Pravin Kondekar, Ashvinee Deo Meshram, “Passive Voltage Amplification in Non-Leaky Ferroelectric-Dielectric Hetero Structure”, Micro and Nano Letters, IET 2018,(accepted) .

4 Alemienla Lemtur, Dheeraj Sharma, Priyanka Suman, Jyoti Patel, Dharmendra Singh Yadav, Neeraj Sharma, Performance Analysis of gate all around GaAsP/AlGaSb CPTFET. Superlattices and Microstructures, 2018.

5 Bhagwan Ram Raad,Dheeraj Sharma, "Source Engineered Tunnel FET for Enhanced Device Electrostatics with Trap Charges Reliability", Microelectronic Engineering, 2018

6 Mohd. Aslam, Dheeraj Sharma, Shivendra Yadav, Deepak Soni, Varun Bajaj, A new design approach for enhancement of DC/RF characteristics with improved ambipolar conduction of charge plasma TFET: Proposal, and optimization, Applied Physics A, Vol. 124, no. 4 pp. 342, Mar. 2018.

7 Deepak Soni, Dheeraj Sharma, Mohd. Aslam, Shivendra Yadav, Improvement in Electrostatic Characteristic of Doped TFET by Charge Plasma Formation, Journal of computational electronics, 2018.

8 Shivendra Yadav, Dheeraj Sharma, BandiVenkataChandan, Mohd. Aslam, Deepak Soni, Neeraj Sharma, A Novel Hetero-material Gate-Underlap Electrically Doped TFET for Improving DC/RF and AmbipolarBehaviour, Superlattices and Microstructures, vol. 117, pp. 9-17, Feb. 2018

9 Bandi Venkata Chandan, Sushmitha Dasari, Shivendra Yadav and DheerajSharma, A New Approach to Suppress Ambipolarity and Improve RF and Linearity Performances on Electrically Doped Tunnel FET, IET Micro and Nano Letter, 2018.

10 Anju, Shivendra Yadav, Dheeraj Sharma, “Assessment of read and write stability for 6T SRAM cell based on charge plasma DLTFET” Superlattices and Microstruct, Elsevier, Science direct, Accepted in Oct, 2018.

11 Deepak Soni, Dheeraj Sharma, Mohd. Aslam, Shivendra Yadav, A novel approach for the improvement of electrostatic behaviour of physically doped TFET by using plasma formation and shortening of gate electrode with hetero gate dielectric, APPLIED PHYSICS A, 2018.

12 Mal, I., D. P. Panda, B. Tongbram, D. P. Samajdar, and S. Chakrabarti. "Analytical modeling of temperature and power dependent photoluminescence (PL) spectra of InAs/GaAs quantum dots." Journal of Applied Physics 124, no. 14 (2018): 145701.

13 Mal, Indranil, Dip Prakash Samajdar, and A. John Peter. "Theoretical studies on band structure and optical gain of GaInAsN/GaAs/GaAs cylindrical quantum dot." Superlattices and Microstructures 119 (2018): 103-113.

S. No.	Paper Title
1	Pandey, S., Gawande, T. & Kondekar, P.N. “A 3.1–10.6 GHz UWB LNA Basedon Self Cascode Technique for Improved Bandwidth and High Gain” Wireless Pers Commun (2018).
2	Pandey, Sunil; Gawande, Tushar; Inge, Shashank; Pathak, Abhijeet; Kondekar, Pravin N.: 'Design and analysis of wideband low-power LNA for improved RF performance with compact chip area', IET Microwaves, Antennas & Propagation, 2018, DOI: 10.1049/iet-map.2018.0055
3	Bhaskar Awadhiya, Pravin Kondekar, Ashvinee Deo Meshram, “Passive Voltage Amplification in Non-Leaky Ferroelectric-Dielectric Hetero Structure”, Micro and Nano Letters, IET 2018,(accepted) .
4	Alemienla Lemtur, Dheeraj Sharma, Priyanka Suman, Jyoti Patel, Dharmendra Singh Yadav, Neeraj Sharma, Performance Analysis of gate all around GaAsP/AlGaSb CPTFET. Superlattices and Microstructures, 2018.
5	Bhagwan Ram Raad,Dheeraj Sharma, "Source Engineered Tunnel FET for Enhanced Device Electrostatics with Trap Charges Reliability", Microelectronic Engineering, 2018
6	Mohd. Aslam, Dheeraj Sharma, Shivendra Yadav, Deepak Soni, Varun Bajaj, A new design approach for enhancement of DC/RF characteristics with improved ambipolar conduction of charge plasma TFET: Proposal, and optimization, Applied Physics A, Vol. 124, no. 4 pp. 342, Mar. 2018.
7	Deepak Soni, Dheeraj Sharma, Mohd. Aslam, Shivendra Yadav, Improvement in Electrostatic Characteristic of Doped TFET by Charge Plasma Formation, Journal of computational electronics, 2018.
8	Shivendra Yadav, Dheeraj Sharma, BandiVenkataChandan, Mohd. Aslam, Deepak Soni, Neeraj Sharma, A Novel Hetero-material Gate-Underlap Electrically Doped TFET for Improving DC/RF and AmbipolarBehaviour, Superlattices and Microstructures, vol. 117, pp. 9-17, Feb. 2018
9	Bandi Venkata Chandan, Sushmitha Dasari, Shivendra Yadav and DheerajSharma, A New Approach to Suppress Ambipolarity and Improve RF and Linearity Performances on Electrically Doped Tunnel FET, IET Micro and Nano Letter, 2018.
10	Anju, Shivendra Yadav, Dheeraj Sharma, “Assessment of read and write stability for 6T SRAM cell based on charge plasma DLTFET” Superlattices and Microstruct, Elsevier, Science direct, Accepted in Oct, 2018.
11	Deepak Soni, Dheeraj Sharma, Mohd. Aslam, Shivendra Yadav, A novel approach for the improvement of electrostatic behaviour of physically doped TFET by using plasma formation and shortening of gate electrode with hetero gate dielectric, APPLIED PHYSICS A, 2018.
12	Mal, I., D. P. Panda, B. Tongbram, D. P. Samajdar, and S. Chakrabarti. "Analytical modeling of temperature and power dependent photoluminescence (PL) spectra of InAs/GaAs quantum dots." Journal of Applied Physics 124, no. 14 (2018): 145701.
13	Mal, Indranil, Dip Prakash Samajdar, and A. John Peter. "Theoretical studies on band structure and optical gain of GaInAsN/GaAs/GaAs cylindrical quantum dot." Superlattices and Microstructures 119 (2018): 103-113.