Micro and Nano Electronics LAB, PDPM IIITDMJ

Back

JOURNAL PUBLICATIONS

2017

S. No. Paper Title

1 P. N. Kondekar, K. Nigam, S. Pandey andD. Sharma, Design and Analysis of Polarity Controlled Electrically Doped Tunnel FET With Bandgap Engineering for Analog/RF Applications, IEEE Transactions on Electron Devices, vol. 64, no. 2, pp. 412-418, Feb. 2017. (Impact factor - 2.605)

2 S. V. Inge, N. K. Jaiswal and P. N. Kondekar "Realizing Negative Differential Resistance/Switching phenomena in zigzag GaN nanoribbons by edge fluorination: A DFT Investigation," accepted in Advanced Materials Interfaces,John wiley, June 2017. (Impact factor - 4.279)

3 P. Venkatesh, K. Nigam, S. Pandey, D. Sharma and P. N. Kondekar "Impact of Interface Trap Charges on Performance of Electrically Doped Tunnel FET with Heterogeneous Gate Dielectric," in IEEE Transactions on Device and Materials Reliability, vol. 17, no. 1, pp. 245-252, March 2017. (Impact factor - 1.68)

4 S. Agrawal, R. D. Gupta, M.S. Parihar, and P. N. Kondekar, “A Wideband High Gain Dielectric Resonator Antenna For RF Energy Harvesting Application,” AEUInternational Journal of Electronics and Communications, 2017, (Impact factor-0.786)

5 S. Agrawal, M.S. Parihar, and P. N. Kondekar, “A dual-band RF energy harvesting circuit using 4th order dual-band matching network,” Cogent Engineering, 2017, 1332705.

6 S. Pandey, T. Gawande and P. N. Kondekar, " A 0.9 V, 4.57 mW UWB LNA with improved gain and low power consumption for 3.1-10.6 GHz ultra-wide band applications, available online on 26 April 2017 in Springer Wireless Personal Communications, ISSN 1572-834X. DOI 10.1007/s11277-017-4185-4 (SCI Indexed, IF- 0.951)

7 B. Awadhiya, S. Pandey, K. Nigam and P. N. Kondekar, Effect of ITC's on Linearity and Distortion Performance of Junctionless Tunnel Field Effect Transistor, Superlattices and Microstructures, accepted (In press), ISSN 0749-6036. (SCI Indexed, IF-2.17)

8 P. Venkatesh, K. Nigam, S. Pandey, D. Sharma and P. N. Kondekar, A dielectrically modulated electrically doped tunnel FET for application of label free biosensor, Superlattices and Microstructures, Available online 18 May 2017, ISSN 0749-6036, https://doi.org/10.1016/j.spmi.2017.05.035. (SCI Indexed, IF-2.17)

9 Anju, S. Tirkey, K. Nigam, S. Pandey, D. Sharma and P. N. Kondekar, " Investigation of gate material engineering in junctionless TFET to overcome the trade-off between ambipolarity and RF/Linearity metrics, Superlattices and Microstructures, Available online 16 May 2017, ISSN 0749-6036, https://doi.org/10.1016/j.spmi.2017.03.059. (SCI Indexed, IF-2.17)

10 S. Singh, P. N. Kondekar and A. P. Singh "Investigation of Analog/Radiofrequency Figures-of-Merits of Charge Plasma Schottky Barrier Tunnel Field Effect Transistor, accepted in Journal of Nanoelectronics and Optoelectronics, April 2017. (Impact factor – 0.675)

11 B. R. Raad, S. Tirkey, D. Sharma and P. N. Kondekar, "A New Design Approach of Dopingless Tunnel FET for Enhancement of Device Characteristics, accepted in IEEE Transactions on Electron Devices, March 2017. (Impact factor - 2.605)

12 A.Naugarhiya, P. Wakhradkar, P. N. Kondekarand R. Patrikar, “Analytical model for 4HSiC superjunction drift layer with anisotropic properties for ultrahigh-voltage applications,” Journal of computational electronics. (Accepted, in press). (Impact factor – 1.1)

13 K. Nigam, S. Pandey, P. N. Kondekar, D. Sharma and Pawan Kumar, "A Barrier Controlled Charge Plasma Based TFET with Gate Engineering for Ambipolar Suppression and RF/Linearity Performance Improvement, accepted in IEEE Transactions on Electron Devices, March 2017. (Impact factor - 2.605)

14 K. Nigam, S. Pandey, P. N. Kondekar, D. Sharma, M.Verma and Anju, 'Performance Estimation of Polarity Controlled Electrostatically Doped Tunnel Field Effect Transistor', Micro & Nano Letters, 2016, DOI: 10.1049/mnl.2016.0729.(Impact factor – 0.85)

15 D. Sharma, B. R.Raad, D. S. Yadav, P. N. Kondekar and Kaushal Nigam, Twodimensional potential, electric field and drain current model of source pocket hetero gate dielectric triple work function tunnel field-effect transistor, IET Micro and Nano letters, vol. 12, issue 1, pp. 11-16, Jan. 2017. (Impact factor – 0.85)

16 S. Dubey and P. N. Kondekar, Asymmetrically doped stacked channel strained SOI FinFET, Elsevier Superlattices and Microstructures, vol. 102, Feb. 2017, pp. 74-78, ISSN 0749-6036 (Impact factor - 2.1).

17 S. Singh, R. Sinha, P.N. Kondekar, Estimation of Analog/Radio-Frequency Figures-of- Merits and Circuit Performance of Dynamically Reconfigurable Electrostatically Doped Silicon Nanowire Schottky Barrier FET, Journal of Nanoelectronics and Optoelectronics, April 2017. (Accepted, in press) (Impact factor – 0.675).

18 M. Verma, D. Sharma, S. Pandey, K. Nigam, P.N. Kondekar, Performance Comparison of Single and Dual Metal Dielectrically Modulated TFETs for the Application of Label Free Biosensor, Elsevier Superlattices and Microstructures, vol. 101, Jan. 2017, pp. 219- 227, ISSN 0749-6036(Impact factor - 2.1).

19 Sangeeta Singh, ArunPratap Singh, P.N. Kondekar, A novel self-aligned charge plasma Schottky barrier tunnel FET using work function engineering, Elsevier Microelectronics Engineering, vol. 168, pp.67-75, 2017.

20 D. Singh, S. Pandey, K. Nigam, D. Sharma, D. S. Yadav, P. N.Kondekar, A Charge Plasma based Dielectric Modulated Junctionless TFET for Biosensor Label Free Detection, IEEE Transactions on Electron Devices, vol. 64, no. 10, pp. 271-278, Jan. 2017. (Impact factor - 2.605)

21 BandiVenkataChandan, Kaushal Nigam,DheerajSharma ”A JunctionlessBased Dielectric Modulated Electrically Doped Tunnel FET for Highly Sensitive Biosensor Applications” IET Micro Nano Lett., In Press, 2017.

22 Deepak Soni, Dheeraj Sharma, Shivendra Yadav, Mohd. Aslam, NeerajSharma ”Performance improvement of doped TFET by using plasma formation concept” Superlattices and Microstruct, Elsevier, Science direct, Accepted in Oct, 2017.

23 Sukeshni Tirkey, Bhagwanram Raad, Dharmendra Yadav, Dheeraj Sharma, “A Novel Approach to Improve the Performance of Charge Plasma Tunnel FieldEffect Transistor” IEEE Trans. Electron Devices, accepted in 2017.

24 SachinTaran, Varun Bajaj, Dheeraj Sharma, SiulySiuly, AbdulkadirSengur’, ”Features based on analytic IMF for classifying moyor imagery EEG signals in BCI applications” Measurement, Elsevier, Science direct, Accepted in 2017.

25 Mohd. Aslam, Shivendra Yadav, Deepak Soni, Dheeraj Sharma, ”A New Design Approach for Enhancement of DC/RF Performance with Improved AmbipolarConduction of Dopingless TFET”, SuperlatticesMicrostruct, accepted in 2017.

26 D. S. Yadav, D. Sharma, S. Tirkey, and V. Bajaj, A systematic investigation for performance improvement by integrated effect of gate under lapping, dual work functionality and hetero gate dielectric for CPTFET, Journal of computational electronics., In Press, Published online 22 Aug. 2017.

27 S. Tirkey, D. Sharma, D. S. Yadav, and S. Yadav, Analysis of a Novel Metal Implant Junctionless Tunnel Field-Effect Transistor for Better DC and Analog/RF Electrostatic Parameters, IEEE Trans. Electron Devices, vol. 63, no. 9, pp. 3943-3950, Sep. 2017.

28 M. Verma, S. Tirkey, S. Yadav, D. Sharma, and D.S. Yadav, Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor, IEEE Trans. Electron Devices, vol. 63, no. 9, pp. 3841-3848, Sep. 2017.

29 S. Tirkey, B. R. Raad, Anju, and D. Sharma, A Novel Junction-less Charge Plasma TFET with Dual Drain Work Functionality for Suppressing Ambipolar Nature and Improving RF Performance, IET Micro Nano Lett., In Press, Published online 31 Jul. 2017.

30 S. Taran, V. Bajaj, and D. Sharma, A robust Hermite decomposition algorithm for classification of sleep apnea EEG signals, IET Micro Nano Lett., vol. 53, no. 17, pp. 11821184, Aug. 2017.

31 S. Tirkey, B. R. Raad, D. Sharma, and D. S. Yadav, Introduction of a metal strip in oxide region of junctionless tunnel field-effect transistor to improve DC and RF performance, Journal of computational electronics., In Press, Published online 24 Jul. 2017.

32 D. S. Yadav, D.Sharma, D. Soni, and Mohd. Aslam, Controlling ambipolarity with improved RF performance by drain/gate work function engineering and using high dielectric material in electrically doped TFET: proposal and optimization, Journal of computational electronics., In Press, Published online 09 Jun. 2017.

33 D. S.Yadav, A. Verma, D. Sharma, S. Tirkey, and B.R. Raad, Comparativeinvestigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance,SuperlatticesMicrostruct., In Press, Corrected Proof, Available online 9 Jun. 2017.

34 D. S. Yadav, D. Sharma, A. Kumar, D. Rathor, R. Agrawal, S. Tirkey, B. R. Raad, and V. Bajaj , Performance investigation of hetero material (InAs/Si) based charge plasma TFET, IET Micro Nano Lett., vol.12 , no.6 , pp.358 363, Jan. 2017.

S. No.	Paper Title
1	P. N. Kondekar, K. Nigam, S. Pandey andD. Sharma, Design and Analysis of Polarity Controlled Electrically Doped Tunnel FET With Bandgap Engineering for Analog/RF Applications, IEEE Transactions on Electron Devices, vol. 64, no. 2, pp. 412-418, Feb. 2017. (Impact factor - 2.605)
2	S. V. Inge, N. K. Jaiswal and P. N. Kondekar "Realizing Negative Differential Resistance/Switching phenomena in zigzag GaN nanoribbons by edge fluorination: A DFT Investigation," accepted in Advanced Materials Interfaces,John wiley, June 2017. (Impact factor - 4.279)
3	P. Venkatesh, K. Nigam, S. Pandey, D. Sharma and P. N. Kondekar "Impact of Interface Trap Charges on Performance of Electrically Doped Tunnel FET with Heterogeneous Gate Dielectric," in IEEE Transactions on Device and Materials Reliability, vol. 17, no. 1, pp. 245-252, March 2017. (Impact factor - 1.68)
4	S. Agrawal, R. D. Gupta, M.S. Parihar, and P. N. Kondekar, “A Wideband High Gain Dielectric Resonator Antenna For RF Energy Harvesting Application,” AEUInternational Journal of Electronics and Communications, 2017, (Impact factor-0.786)
5	S. Agrawal, M.S. Parihar, and P. N. Kondekar, “A dual-band RF energy harvesting circuit using 4th order dual-band matching network,” Cogent Engineering, 2017, 1332705.
6	S. Pandey, T. Gawande and P. N. Kondekar, " A 0.9 V, 4.57 mW UWB LNA with improved gain and low power consumption for 3.1-10.6 GHz ultra-wide band applications, available online on 26 April 2017 in Springer Wireless Personal Communications, ISSN 1572-834X. DOI 10.1007/s11277-017-4185-4 (SCI Indexed, IF- 0.951)
7	B. Awadhiya, S. Pandey, K. Nigam and P. N. Kondekar, Effect of ITC's on Linearity and Distortion Performance of Junctionless Tunnel Field Effect Transistor, Superlattices and Microstructures, accepted (In press), ISSN 0749-6036. (SCI Indexed, IF-2.17)
8	P. Venkatesh, K. Nigam, S. Pandey, D. Sharma and P. N. Kondekar, A dielectrically modulated electrically doped tunnel FET for application of label free biosensor, Superlattices and Microstructures, Available online 18 May 2017, ISSN 0749-6036, https://doi.org/10.1016/j.spmi.2017.05.035. (SCI Indexed, IF-2.17)
9	Anju, S. Tirkey, K. Nigam, S. Pandey, D. Sharma and P. N. Kondekar, " Investigation of gate material engineering in junctionless TFET to overcome the trade-off between ambipolarity and RF/Linearity metrics, Superlattices and Microstructures, Available online 16 May 2017, ISSN 0749-6036, https://doi.org/10.1016/j.spmi.2017.03.059. (SCI Indexed, IF-2.17)
10	S. Singh, P. N. Kondekar and A. P. Singh "Investigation of Analog/Radiofrequency Figures-of-Merits of Charge Plasma Schottky Barrier Tunnel Field Effect Transistor, accepted in Journal of Nanoelectronics and Optoelectronics, April 2017. (Impact factor – 0.675)
11	B. R. Raad, S. Tirkey, D. Sharma and P. N. Kondekar, "A New Design Approach of Dopingless Tunnel FET for Enhancement of Device Characteristics, accepted in IEEE Transactions on Electron Devices, March 2017. (Impact factor - 2.605)
12	A.Naugarhiya, P. Wakhradkar, P. N. Kondekarand R. Patrikar, “Analytical model for 4HSiC superjunction drift layer with anisotropic properties for ultrahigh-voltage applications,” Journal of computational electronics. (Accepted, in press). (Impact factor – 1.1)
13	K. Nigam, S. Pandey, P. N. Kondekar, D. Sharma and Pawan Kumar, "A Barrier Controlled Charge Plasma Based TFET with Gate Engineering for Ambipolar Suppression and RF/Linearity Performance Improvement, accepted in IEEE Transactions on Electron Devices, March 2017. (Impact factor - 2.605)
14	K. Nigam, S. Pandey, P. N. Kondekar, D. Sharma, M.Verma and Anju, 'Performance Estimation of Polarity Controlled Electrostatically Doped Tunnel Field Effect Transistor', Micro & Nano Letters, 2016, DOI: 10.1049/mnl.2016.0729.(Impact factor – 0.85)
15	D. Sharma, B. R.Raad, D. S. Yadav, P. N. Kondekar and Kaushal Nigam, Twodimensional potential, electric field and drain current model of source pocket hetero gate dielectric triple work function tunnel field-effect transistor, IET Micro and Nano letters, vol. 12, issue 1, pp. 11-16, Jan. 2017. (Impact factor – 0.85)
16	S. Dubey and P. N. Kondekar, Asymmetrically doped stacked channel strained SOI FinFET, Elsevier Superlattices and Microstructures, vol. 102, Feb. 2017, pp. 74-78, ISSN 0749-6036 (Impact factor - 2.1).
17	S. Singh, R. Sinha, P.N. Kondekar, Estimation of Analog/Radio-Frequency Figures-of- Merits and Circuit Performance of Dynamically Reconfigurable Electrostatically Doped Silicon Nanowire Schottky Barrier FET, Journal of Nanoelectronics and Optoelectronics, April 2017. (Accepted, in press) (Impact factor – 0.675).
18	M. Verma, D. Sharma, S. Pandey, K. Nigam, P.N. Kondekar, Performance Comparison of Single and Dual Metal Dielectrically Modulated TFETs for the Application of Label Free Biosensor, Elsevier Superlattices and Microstructures, vol. 101, Jan. 2017, pp. 219- 227, ISSN 0749-6036(Impact factor - 2.1).
19	Sangeeta Singh, ArunPratap Singh, P.N. Kondekar, A novel self-aligned charge plasma Schottky barrier tunnel FET using work function engineering, Elsevier Microelectronics Engineering, vol. 168, pp.67-75, 2017.
20	D. Singh, S. Pandey, K. Nigam, D. Sharma, D. S. Yadav, P. N.Kondekar, A Charge Plasma based Dielectric Modulated Junctionless TFET for Biosensor Label Free Detection, IEEE Transactions on Electron Devices, vol. 64, no. 10, pp. 271-278, Jan. 2017. (Impact factor - 2.605)
21	BandiVenkataChandan, Kaushal Nigam,DheerajSharma ”A JunctionlessBased Dielectric Modulated Electrically Doped Tunnel FET for Highly Sensitive Biosensor Applications” IET Micro Nano Lett., In Press, 2017.
22	Deepak Soni, Dheeraj Sharma, Shivendra Yadav, Mohd. Aslam, NeerajSharma ”Performance improvement of doped TFET by using plasma formation concept” Superlattices and Microstruct, Elsevier, Science direct, Accepted in Oct, 2017.
23	Sukeshni Tirkey, Bhagwanram Raad, Dharmendra Yadav, Dheeraj Sharma, “A Novel Approach to Improve the Performance of Charge Plasma Tunnel FieldEffect Transistor” IEEE Trans. Electron Devices, accepted in 2017.
24	SachinTaran, Varun Bajaj, Dheeraj Sharma, SiulySiuly, AbdulkadirSengur’, ”Features based on analytic IMF for classifying moyor imagery EEG signals in BCI applications” Measurement, Elsevier, Science direct, Accepted in 2017.
25	Mohd. Aslam, Shivendra Yadav, Deepak Soni, Dheeraj Sharma, ”A New Design Approach for Enhancement of DC/RF Performance with Improved AmbipolarConduction of Dopingless TFET”, SuperlatticesMicrostruct, accepted in 2017.
26	D. S. Yadav, D. Sharma, S. Tirkey, and V. Bajaj, A systematic investigation for performance improvement by integrated effect of gate under lapping, dual work functionality and hetero gate dielectric for CPTFET, Journal of computational electronics., In Press, Published online 22 Aug. 2017.
27	S. Tirkey, D. Sharma, D. S. Yadav, and S. Yadav, Analysis of a Novel Metal Implant Junctionless Tunnel Field-Effect Transistor for Better DC and Analog/RF Electrostatic Parameters, IEEE Trans. Electron Devices, vol. 63, no. 9, pp. 3943-3950, Sep. 2017.
28	M. Verma, S. Tirkey, S. Yadav, D. Sharma, and D.S. Yadav, Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor, IEEE Trans. Electron Devices, vol. 63, no. 9, pp. 3841-3848, Sep. 2017.
29	S. Tirkey, B. R. Raad, Anju, and D. Sharma, A Novel Junction-less Charge Plasma TFET with Dual Drain Work Functionality for Suppressing Ambipolar Nature and Improving RF Performance, IET Micro Nano Lett., In Press, Published online 31 Jul. 2017.
30	S. Taran, V. Bajaj, and D. Sharma, A robust Hermite decomposition algorithm for classification of sleep apnea EEG signals, IET Micro Nano Lett., vol. 53, no. 17, pp. 11821184, Aug. 2017.
31	S. Tirkey, B. R. Raad, D. Sharma, and D. S. Yadav, Introduction of a metal strip in oxide region of junctionless tunnel field-effect transistor to improve DC and RF performance, Journal of computational electronics., In Press, Published online 24 Jul. 2017.
32	D. S. Yadav, D.Sharma, D. Soni, and Mohd. Aslam, Controlling ambipolarity with improved RF performance by drain/gate work function engineering and using high dielectric material in electrically doped TFET: proposal and optimization, Journal of computational electronics., In Press, Published online 09 Jun. 2017.
33	D. S.Yadav, A. Verma, D. Sharma, S. Tirkey, and B.R. Raad, Comparativeinvestigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance,SuperlatticesMicrostruct., In Press, Corrected Proof, Available online 9 Jun. 2017.
34	D. S. Yadav, D. Sharma, A. Kumar, D. Rathor, R. Agrawal, S. Tirkey, B. R. Raad, and V. Bajaj , Performance investigation of hetero material (InAs/Si) based charge plasma TFET, IET Micro Nano Lett., vol.12 , no.6 , pp.358 363, Jan. 2017.