Micro and Nano Electronics LAB, PDPM IIITDMJ

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JOURNAL PUBLICATIONS

2016

S. No. Paper Title

1 B. R.Raad, D.Sharma,K. Nigam,P. N. Kondekar, “Utility of II-V group ternary compound semiconductor materials for unipolar conduction in tunnel field-effecttransistor,” Journal of computational electronics. (Accepted, in press)(Impact factor – 1.86)(Impact factor – 1.1)

2 D. Sharma, B. R. Raad, D. S. Yadav, P. N. Kondekar, and K. Nigam, “Two-dimensional potential, electric field and drain current model of source pocket hetero gate dielectric triple work function tunnel field-effect transistor, ” Micro and Nano letters. (Accepted, in press)(Impact factor –0.85)

3 B. R. Raad, D. Sharma, P. Kondekar, K. Nigam, and D. S. Yadav, "Drain Work Function Engineered Doping-Less Charge Plasma TFET for Ambipolar Suppression and RF Performance Improvement: A Proposal, Design, and Investigation," IEEE Transactions on Electron Devices, Vol. 63 no 10, pp. 3950-3957, Oct. 2016. (Impact factor - 2.605) .

4 K. Nigam, S. Pandey, P N Kondekar, and D. Sharma, "Temperature sensitivity analysis of polarity controlled electrostatically doped tunnel field effect transistor," Superlattices and Microstructures, vol. 97, pp. 598-605, Sept. 2016. (Impact factor - 2.1)

5 K.Nigam, P.N. Kondekar, D. Sharma, and B. R.Raad, "A New Approach for Design and Investigation of Junction-Less Tunnel FET Using Electrically Doped Mechanism," Superlattices and Microstructures, vol. 98, pp. 1-7, Oct. 2016.(Impact factor - 2.1)

6 K.Nigam, P.N. Kondekar, and D. Sharma, "Approach for ambipolar behaviour suppression in tunnel FET by work-function engineering," Micro & Nano Letters, vol. 11, issue 8, pp. 460 - 464, Aug. 2016. (Impact factor - 0.85)

7 B. Raad, D. Sharma, K. Nigam, and P. N.Kondekar, "Physics Based Simulation Study of High Performance GaAsP-InGaAs TFET," Micro & Nano Letters, vol. 11, issue 7, pp. 366 – 368, Jul. 2016. (Impact factor - 0.85)

8 S. Dubey and P. N. Kondekar, "Fin shape dependent variability for strained SOI FinFETs," Microelectronic Engineering, vol. 162, pp. 63–68, Apr. 2016. (Impact factor- 1.27)

9 B. R. Raad, K. Nigam, D. Sharma, and P.N. Kondekar, "Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement," Superlattices and Microstructures, vol. 94, pp. 138-146, Apr 2016. (Impact factor- 2.1)

10 K. Nigam, P. N. Kondekar, and D. Sharma, "High Frequency Performance of Dual Metal Gate Vertical Tunnel Field Effect Transistor Based on Work Function Engineering," Micro & Nano Letters, vol. 11, issue 6, p. 319 – 322, June 2016, Apr. 2016. (Impact factor - 0.85)

11 B. Raad, K. Nigam, D. Sharma, and P. N.Kondekar, "Dielectric and Work function Engineered TFET for Ambipolar Suppression and RF Performance Enhancement," Electronics Letters, vol. 52, issue 9, pp. 770 – 772, Apr. 2016. (Impact factor - 0.93)

12 S. Singh, R.Sinha, and P.N. Kondekar, "A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET," Superlattices and Microstructures, vol. 93, pp. 40–49, May 2016. (Impact factor- 2.1)

13 S. Singh, P. N. Kondekar and Neeraj Jaiswal, “Label-Free Biosensor using Nanogap Embedded Dielectric Modulated Schottky Tunneling Source Impact Ionization MOS,” Microelectronic Engineering, 149, 129-134, 2016. (Impact factor 1.27)

14 K. Nigam, P. N. Kondekar and D. Sharma, "DC characteristics and analog/RF performance of novel polarity control GaAs-Ge based tunnel field-effect transistor," Superlattices and Microstructures, vol. 92, pp. 224–231, Apr. 2016. (Impact factor- 2.1)

15 S. Dubey and P. N.Kondekar, "Performance comparison of conventional and strained FinFET inverters," Microelectronics Journal, vol. 55, pp. 108–115, Sept. 2016. (Impact factor- 0.88)

16 S. Kale and P. N. Kondekar, "Ferroelectric Schottky Barrier Tunnel FET with Gate-Drain Underlap: Proposal and Investigation," Superlattices and Microstructures, vol. 89, pp. 225-230, 2016. (Impact factor- 2.1)

17 S. Singh and P. N. Kondekar, "A novel process variation immune dopingless zero subthreshold slope and zero impact ionization FET (DL-Z2 FET) based on transition metals," Journal of Computational Electronics, vol. 15, issue 1, pp 67–75, Mar. 2016. (Impact factor- 1.1)

18 S. Singh and P.N. Kondekar, "Analytical modeling of Schottky tunneling source impact MOSFET with reduced breakdown voltage," Engineering Science and Technology, an International Journal, vol. 19, issue 1, pp. 421–428, Mar. 2016.

19 S. Ahish D. Sharma Y. B. N. Kumar and M. H. Vasantha ”Performance enhancement of novel InAs/Si hetero double-gate tunnel FET using Gaussian doping” IEEE Trans. Electron Devices, vol. 63, no. 1, pp. 288-295, Jan. 2016.

S. No.	Paper Title
1	B. R.Raad, D.Sharma,K. Nigam,P. N. Kondekar, “Utility of II-V group ternary compound semiconductor materials for unipolar conduction in tunnel field-effecttransistor,” Journal of computational electronics. (Accepted, in press)(Impact factor – 1.86)(Impact factor – 1.1)
2	D. Sharma, B. R. Raad, D. S. Yadav, P. N. Kondekar, and K. Nigam, “Two-dimensional potential, electric field and drain current model of source pocket hetero gate dielectric triple work function tunnel field-effect transistor, ” Micro and Nano letters. (Accepted, in press)(Impact factor –0.85)
3	B. R. Raad, D. Sharma, P. Kondekar, K. Nigam, and D. S. Yadav, "Drain Work Function Engineered Doping-Less Charge Plasma TFET for Ambipolar Suppression and RF Performance Improvement: A Proposal, Design, and Investigation," IEEE Transactions on Electron Devices, Vol. 63 no 10, pp. 3950-3957, Oct. 2016. (Impact factor - 2.605) .
4	K. Nigam, S. Pandey, P N Kondekar, and D. Sharma, "Temperature sensitivity analysis of polarity controlled electrostatically doped tunnel field effect transistor," Superlattices and Microstructures, vol. 97, pp. 598-605, Sept. 2016. (Impact factor - 2.1)
5	K.Nigam, P.N. Kondekar, D. Sharma, and B. R.Raad, "A New Approach for Design and Investigation of Junction-Less Tunnel FET Using Electrically Doped Mechanism," Superlattices and Microstructures, vol. 98, pp. 1-7, Oct. 2016.(Impact factor - 2.1)
6	K.Nigam, P.N. Kondekar, and D. Sharma, "Approach for ambipolar behaviour suppression in tunnel FET by work-function engineering," Micro & Nano Letters, vol. 11, issue 8, pp. 460 - 464, Aug. 2016. (Impact factor - 0.85)
7	B. Raad, D. Sharma, K. Nigam, and P. N.Kondekar, "Physics Based Simulation Study of High Performance GaAsP-InGaAs TFET," Micro & Nano Letters, vol. 11, issue 7, pp. 366 – 368, Jul. 2016. (Impact factor - 0.85)
8	S. Dubey and P. N. Kondekar, "Fin shape dependent variability for strained SOI FinFETs," Microelectronic Engineering, vol. 162, pp. 63–68, Apr. 2016. (Impact factor- 1.27)
9	B. R. Raad, K. Nigam, D. Sharma, and P.N. Kondekar, "Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement," Superlattices and Microstructures, vol. 94, pp. 138-146, Apr 2016. (Impact factor- 2.1)
10	K. Nigam, P. N. Kondekar, and D. Sharma, "High Frequency Performance of Dual Metal Gate Vertical Tunnel Field Effect Transistor Based on Work Function Engineering," Micro & Nano Letters, vol. 11, issue 6, p. 319 – 322, June 2016, Apr. 2016. (Impact factor - 0.85)
11	B. Raad, K. Nigam, D. Sharma, and P. N.Kondekar, "Dielectric and Work function Engineered TFET for Ambipolar Suppression and RF Performance Enhancement," Electronics Letters, vol. 52, issue 9, pp. 770 – 772, Apr. 2016. (Impact factor - 0.93)
12	S. Singh, R.Sinha, and P.N. Kondekar, "A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET," Superlattices and Microstructures, vol. 93, pp. 40–49, May 2016. (Impact factor- 2.1)
13	S. Singh, P. N. Kondekar and Neeraj Jaiswal, “Label-Free Biosensor using Nanogap Embedded Dielectric Modulated Schottky Tunneling Source Impact Ionization MOS,” Microelectronic Engineering, 149, 129-134, 2016. (Impact factor 1.27)
14	K. Nigam, P. N. Kondekar and D. Sharma, "DC characteristics and analog/RF performance of novel polarity control GaAs-Ge based tunnel field-effect transistor," Superlattices and Microstructures, vol. 92, pp. 224–231, Apr. 2016. (Impact factor- 2.1)
15	S. Dubey and P. N.Kondekar, "Performance comparison of conventional and strained FinFET inverters," Microelectronics Journal, vol. 55, pp. 108–115, Sept. 2016. (Impact factor- 0.88)
16	S. Kale and P. N. Kondekar, "Ferroelectric Schottky Barrier Tunnel FET with Gate-Drain Underlap: Proposal and Investigation," Superlattices and Microstructures, vol. 89, pp. 225-230, 2016. (Impact factor- 2.1)
17	S. Singh and P. N. Kondekar, "A novel process variation immune dopingless zero subthreshold slope and zero impact ionization FET (DL-Z2 FET) based on transition metals," Journal of Computational Electronics, vol. 15, issue 1, pp 67–75, Mar. 2016. (Impact factor- 1.1)
18	S. Singh and P.N. Kondekar, "Analytical modeling of Schottky tunneling source impact MOSFET with reduced breakdown voltage," Engineering Science and Technology, an International Journal, vol. 19, issue 1, pp. 421–428, Mar. 2016.
19	S. Ahish D. Sharma Y. B. N. Kumar and M. H. Vasantha ”Performance enhancement of novel InAs/Si hetero double-gate tunnel FET using Gaussian doping” IEEE Trans. Electron Devices, vol. 63, no. 1, pp. 288-295, Jan. 2016.