Micro and Nano Electronics LAB, PDPM IIITDMJ

Back

JOURNAL PUBLICATIONS

2015

S. No. Paper Title

1 S. Singh, P. N. Kondekar, and P. Pal, "Transient performance estimation of charge plasma based negative capacitance junctionless tunnel FET," Journal of Semiconductors, vol. 37, no. 2, pp. 02-03, Jun. 2015.

2 S. Singh, and P.N. Kondekar, "A novel dynamically configurable electrostatically doped silicon nanowire impact ionization MOS," Superlattices and Microstructures, vol. 88, pp. 695–703, Dec. 2015. (Impact factor- 2.1)

3 S. Kale andP. N. Kondekar, "Suppression of ambipolar leakage current in Schottky barrier MOSFET using gate engineering," Electronics Letters, vol. 51, no. 19, pp. 1536- 1538, 2015. (Impact factor – 0.93)

4 S. Kale andP. N. Kondekar, "Design and investigation of double gate Schottky barrier MOSFET using gate engineering," Micro & Nano Letters, vol. 10, issue 12, pp. 707-711, 2015. (Impact factor - 0.85)

5 A. Naugarhiya, S.Dubey and P.N. Kondekar, “Novel strained superjunction VDMOS,” Superlattices and Microstructures, vol. 85, pp. 461-468, 2015. (Impact factor – 2.1)

6 A.Naugarhiya and P. N. Kondekar, "High permittivity material selection for design of optimum Hk VDMOS," Superlattices and Microstructures, vol. 83, pp. 310-321, 2015. (Impact factor – 2.1)

7 S. Kale and P. N. Kondekar, "Ambipolar leakage reduction in Ge-n-channel schottky barrier MOSFET," IETE Journal of research, vol. 61, no. 4, pp. 323-328, 2015. (Impact factor- 0.2)

8 M. Gupta, N. Gaur, S. Singh, N. K. Jaiswal, andP.N. Kondekar, "Tailoring the electronic properties of a Z-shaped graphene field effect transistor via B/N doping," Physics Letters A, vol. 379, issue. 7, pp. 710-718, 2015. (Impact factor 1.683)

9 S. Singh, P. N. Kondekar and P. Pal “Non-Hysteretic Behavior of Super Steep Ferroelectric Negative Capacitance Tunnel FET Based on Body Profile Engineering” Journal of low power electronics, (JOLPE), vol. 11, pp. 1-7, 2015, doi:10.1166/jolpe.2015.1411. (Impact factor : 0.485)

10 S. Singh and P.N. Kondekar, "Dopingless impact ionization MOS-A remedy for complex process flow," Journal of Semiconductor, vol. 36, no. 7, Jan.2015.

11 S. Singh, and P. N. Kondekar, “Schottky Tunneling Source Impact Ionization MOSFET (STS-IMOS) with Enhanced Device Performance,” International Journal of VLSI design Communication Systems (VLSICS) Vol.6, No.3, pp.41-47, 2015.

S. No.	Paper Title
1	S. Singh, P. N. Kondekar, and P. Pal, "Transient performance estimation of charge plasma based negative capacitance junctionless tunnel FET," Journal of Semiconductors, vol. 37, no. 2, pp. 02-03, Jun. 2015.
2	S. Singh, and P.N. Kondekar, "A novel dynamically configurable electrostatically doped silicon nanowire impact ionization MOS," Superlattices and Microstructures, vol. 88, pp. 695–703, Dec. 2015. (Impact factor- 2.1)
3	S. Kale andP. N. Kondekar, "Suppression of ambipolar leakage current in Schottky barrier MOSFET using gate engineering," Electronics Letters, vol. 51, no. 19, pp. 1536- 1538, 2015. (Impact factor – 0.93)
4	S. Kale andP. N. Kondekar, "Design and investigation of double gate Schottky barrier MOSFET using gate engineering," Micro & Nano Letters, vol. 10, issue 12, pp. 707-711, 2015. (Impact factor - 0.85)
5	A. Naugarhiya, S.Dubey and P.N. Kondekar, “Novel strained superjunction VDMOS,” Superlattices and Microstructures, vol. 85, pp. 461-468, 2015. (Impact factor – 2.1)
6	A.Naugarhiya and P. N. Kondekar, "High permittivity material selection for design of optimum Hk VDMOS," Superlattices and Microstructures, vol. 83, pp. 310-321, 2015. (Impact factor – 2.1)
7	S. Kale and P. N. Kondekar, "Ambipolar leakage reduction in Ge-n-channel schottky barrier MOSFET," IETE Journal of research, vol. 61, no. 4, pp. 323-328, 2015. (Impact factor- 0.2)
8	M. Gupta, N. Gaur, S. Singh, N. K. Jaiswal, andP.N. Kondekar, "Tailoring the electronic properties of a Z-shaped graphene field effect transistor via B/N doping," Physics Letters A, vol. 379, issue. 7, pp. 710-718, 2015. (Impact factor 1.683)
9	S. Singh, P. N. Kondekar and P. Pal “Non-Hysteretic Behavior of Super Steep Ferroelectric Negative Capacitance Tunnel FET Based on Body Profile Engineering” Journal of low power electronics, (JOLPE), vol. 11, pp. 1-7, 2015, doi:10.1166/jolpe.2015.1411. (Impact factor : 0.485)
10	S. Singh and P.N. Kondekar, "Dopingless impact ionization MOS-A remedy for complex process flow," Journal of Semiconductor, vol. 36, no. 7, Jan.2015.
11	S. Singh, and P. N. Kondekar, “Schottky Tunneling Source Impact Ionization MOSFET (STS-IMOS) with Enhanced Device Performance,” International Journal of VLSI design Communication Systems (VLSICS) Vol.6, No.3, pp.41-47, 2015.